Long Electrical Stability on Dual Acceptor p-Type ZnO:Ag,N Thin Films.

p-type Ag-N dual acceptor doped ZnO thin films with long electrical stability were deposited by DC magnetron reactive co-sputtering technique. After deposition, the films were annealed at 400 °C for one hour in a nitrogen-controlled atmosphere. The deposited films were amorphous.

Thermoluminescent properties of ZnS:Mn nanocrystalline powders.

Thermoluminescent ZnS nanocrystals doped with Mn(2+) ions were synthesized by chemical co-precipitation method. From X-ray diffraction studies it was observed that the synthesized nanoparticles have cubic zinc blende structure with average sizes of about 40-50nm. Morphology was analyzed by TEM.