Publications by authors named "Artur Broda"

Highly reflective mirrors are indispensable components in a variety of state-of-the-art photonic devices. Typically used, bulky, multi-layered distributed Bragg (DBR) reflectors are limited to lattice-matched semiconductors or nonconductive dielectrics. Here, we introduce an inverted refractive index-contrast grating (ICG) as compact, single-layer alternative to DBR.

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We investigate experimentally the polarization dynamics of a vertical external-cavity surface-emitting laser with a saturable absorber mirror in the cavity. We demonstrate that the normalized Stokes parameters and degree of polarization are functions of time reaching extreme values around the pulse peaks. Our experiments show that light is elliptically polarized, being able to have a circular right-handed or left-handed component, depending on the orientation of the saturable absorber mirror.

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This paper presents the results of beam investigations on semiconductor IR lasers using novel detectors based on thermocouples. The work covers the design, the fabrication of detectors, and the experimental validation of their sensitivity to IR radiation. The principle of operation of the manufactured detectors is based on the Seebeck effect (the temperature difference between hot and cold junctions induced voltage appearance).

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We report the first experimental parametric analysis of subwavelength monolithic high-contrast grating (MHCG) mirrors. To date, subwavelength grating mirrors have been fabricated by suspending a thin grating membrane in the air or placing it on a low refractive index material - a scheme that requires sophisticated processing and makes the gratings sensitive to mechanical stress, impeding current injection, and heat dissipation if used in active devices. Inherently MHCGs are well suited for optoelectronic devices because they can be fabricated in all possible material systems.

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Switchable, double wavelength generation is demonstrated from a single vertical external cavity surface-emitting laser chip. Power of ~0.5 W for two wavelengths λ≈967 nm and 1,018 nm i.

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