Towards the quantification of the chemical mechanism of light-driven water splitting on GaN photoelectrodes.

We present results from a study addressing the unbiased water-splitting process and its side reactions on GaN-based photoelectrodes decorated with NiO, FeO, and CoO nanoparticles. Observations involving physicochemical analyses of liquid and vapour phases after the experiments were performed in 1 M NaOH under ambient conditions. A water-splitting process with GaN-based photoelectrodes results in the generation of hydrogen gas and hydrogen peroxide.

Analysis of the n-GaN electrochemical etching process and its mechanism in oxalic acid.

We studied the wet electrochemical etching of n-GaN films in oxalic acid. The electrooxidation processes occur in a potentiostatic mode in the voltage range of 5 to 20 V. We described the formation of the porous n-GaN layer structures in several ways.