Publications by authors named "Artem Chizhov"

Zinc oxide is one of the well-known photocatalysts, the potential applications of which are of great importance in photoactivated gas sensing, water and air purification, photocatalytic synthesis, among others. However, the photocatalytic performance of ZnO strongly depends on its morphology, composition of impurities, defect structure, and other parameters. In this paper, we present a route for the synthesis of highly active nanocrystalline ZnO using commercial ZnO micropowder and ammonium bicarbonate as starting precursors in aqueous solutions under mild conditions.

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Photoactivation by UV and visible radiation is a promising approach for the development of semiconductor gas sensors with reduced power consumption, high sensitivity, and stability. Although many hopeful results were achieved in this direction, the theoretical basis for the processes responsible for the photoactivated gas sensitivity still needs to be clarified. In this work, we investigated the mechanisms of UV-activated processes on the surface of nanocrystalline ZnO, InO, and SnO by in situ mass spectrometry and compared the obtained results with the gas sensitivity to oxygen in the dark and at UV irradiation.

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In this work, colloidal perovskite nanocrystals (PNCs) are used to sensitize the photoconductivity of nanocrystalline ZnO films in the visible range. Nanocrystalline ZnO with a crystallite size of 12-16 nm was synthesized by precipitation of a zinc basic carbonate from an aqueous solution, followed by annealing at 300 °C. Perovskite oleic acid- and oleylamine-capped CsPbBr, CsPb(Cl/Br) and CsPb(Br/I) PNCs with a size of 6-13 nm were synthesized by a hot injection method at 170 °C in 1-octadecene.

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Gallium(III) oxide is a promising functional wide-gap semiconductor for high temperature gas sensors of the resistive type. Doping of GaO with tin improves material conductivity and leads to the complicated influence on phase content, microstructure, adsorption sites, donor centers and, as a result, gas sensor properties. In this work, GaO and GaO(Sn) samples with tin content of 0-13 at.

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The review deals with issues related to the principle of operation of resistive semiconductor gas sensors and the use of light activation instead of thermal heating when detecting gases. Information on the photoelectric and optical properties of nanocrystalline oxides SnO, ZnO, InO, and WO, which are the most widely used sensitive materials for semiconductor gas sensors, is presented. The activation of the gas sensitivity of semiconductor materials by both UV and visible light is considered.

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