Distributed feedback broad area lasers with multiple epitaxially stacked active regions and tunnel junctions.

Distributed feedback (DFB) broad area (BA) lasers with multiple epitaxially stacked active regions and tunnel junctions designed for emission around 900 nm are investigated. DFB BA lasers with a cavity length of 1 mm and different stripe widths are compared in terms of their electro-optical performance and beam quality. The laser with a 200 µm stripe width achieved a high optical pulse power of 100 W in 10 ns long pulses at an injection current of 63 A, resulting in a brightness of 81 MW/cmsr.

Generation of sub-100 ps pulses with a peak power of 65 W by gain switching, pulse shortening, and pulse amplification using a semiconductor-based master oscillator-power amplifier system.

We present a method of the generation of sub-100 ps pulses with an all-semiconductor master oscillator-power amplifier (MOPA) system, consisting of a three section distributed Bragg reflector (DBR) laser as MO and a two section tapered PA. The pulses generated by the gain-switched DBR laser are first shortened by the ridge-waveguide input section of the PA acting as a saturable absorber and then amplified by the tapered gain region section. We generate laser pulses with a minimum duration of 35 ps and a peak power of more than 65 W.

Mode-locked InGaAs-AlGaAs disk laser generating sub-200-fs pulses, pulse picking and amplification by a tapered diode amplifier.

Almost chirp-free pulses with a duration of 190 fs were achieved from a mode-locked semiconductor disk laser (SDL) emitting at approximately 1045 nm. Pulse shaping was different from the soliton-like mode-locking process known from lasers using dielectric gain media; passive amplitude modulation provided by a fast saturable absorber was essential. The spectrum of the absorber had to be matched to the gain spectrum within a few nm.