Publications by authors named "Aritra Acharyya"
Article Synopsis
- Researchers are working on advanced terahertz (THz) wave generation using innovative multi-quantum well (MQW) IMPATT diodes made from AlGaN/GaN materials.
- They explored two diode types: junction-based and Schottky barrier structures, and introduced techniques like mesa etching and nitrogen ion implantation to improve performance and reliability.
- Their findings indicate that the Schottky barrier design significantly enhances power output and efficiency, making their devices superior to existing THz sources and opening new possibilities for THz technology applications.
The authors have carried out the large-signal (L-S) simulation of double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on 〈111〉, 〈100〉, and 〈110〉 oriented GaAs. A nonsinusoidal voltage excited (NSVE) L-S simulation technique is used to investigate both the static and L-S performance of the above-mentioned devices designed to operate at millimeter-wave (mm-wave) atmospheric window frequencies, such as 35, 94, 140, and 220 GHz. Results show that 〈111〉 oriented GaAs diodes are capable of delivering maximum RF power with highest DC to RF conversion efficiency up to 94 GHz; however, the L-S performance of 〈110〉 oriented GaAs diodes exceeds their other counterparts while the frequency of operation increases above 94 GHz.
View Article and Find Full Text PDF