Revealing the local crystallinity of single silicon core-shell nanowires using tip-enhanced Raman spectroscopy.

Tip-enhanced Raman spectroscopy is combined with polarization angle-resolved spectroscopy to investigate the nanometer-scale structural properties of core-shell silicon nanowires (crystalline Si core and amorphous Si shell), which were synthesized by platinum-catalyzed vapor-liquid-solid growth and silicon overcoating by thermal chemical vapor deposition. Local changes in the fraction of crystallinity in these silicon nanowires are characterized at an optical resolution of about 300 nm. Furthermore, we are able to resolve the variations in the intensity ratios of the Raman peaks of crystalline Si and amorphous Si by applying tip-enhanced Raman spectroscopy, at sample positions being 8 nm apart.

Highly Localized SERS Measurements Using Single Silicon Nanowires Decorated with DNA Origami-Based SERS Probe.

Surface enhanced Raman spectroscopy (SERS) measurements are conventionally performed using assemblies of metal nanostructures on a macro- to micro-sized substrate or by dispersing colloidal metal nanoparticles directly onto the sample of interest. Despite intense use, these methods allow neither the removal of the nanoparticles after a measurement nor a defined confinement of the SERS measurement position. So far, tip enhanced Raman spectroscopy is still the key technique in this regard but not adequate for various samples mainly due to diminished signal enhancement compared to other techniques, poor device fabrication reproducibility, and cumbersome experimental setup requirements.