Examining the Desirable Properties of ZnSnO by Annealing Treatment with a Real-Time Observation of Resistivity.

In this report, 38 nm-thick amorphous zinc-tin oxide (a-ZTO) films were deposited by radio frequency magnetron cosputtering. a-ZTO films were annealed by in situ monitoring of the sheet resistance improvements during the annealing process. A sharp drop in the slope of the sheet resistance curve was observed.

High-performance p-type VO films by spray pyrolysis for transparent conducting oxide applications.

High-quality epitaxial p-type VO thin films have been synthesized by spray pyrolysis. The films exhibited excellent electrical performance, with measurable mobility and high carrier concentration. The conductivity of the films varied between 115 and 1079 Scm while the optical transparency of the films ranged from 32 to 65% in the visible region.

Tuning of oxygen vacancy-induced electrical conductivity in Ti-doped hematite films and its impact on photoelectrochemical water splitting.

Titanium (Ti)-doped hematite (α-FeO) films were grown in oxygen-depleted condition by using the spray pyrolysis technique. The impact of post-deposition annealing in oxygen-rich condition on both the conductivity and water splitting efficiency was investigated. The X-ray diffraction pattern revealed that the films are of rhombohedral α-FeO structure and dominantly directed along (012).

Crystallographic Characterisation of Ultra-Thin, or Amorphous Transparent Conducting Oxides-The Case for Raman Spectroscopy.

The electronic and optical properties of transparent conducting oxides (TCOs) are closely linked to their crystallographic structure on a macroscopic (grain sizes) and microscopic (bond structure) level. With the increasing drive towards using reduced film thicknesses in devices and growing interest in amorphous TCOs such as n-type InGaZnO 4 (IGZO), ZnSnO 3 (ZTO), p-type Cu x CrO 2 , or ZnRh 2 O 4 , the task of gaining in-depth knowledge on their crystal structure by conventional X-ray diffraction-based measurements are becoming increasingly difficult. We demonstrate the use of a focal shift based background subtraction technique for Raman spectroscopy specifically developed for the case of transparent thin films on amorphous substrates.