Optical Biosensor for Bacteremia detection from human blood samples at a label-free Liquid Crystal-Aqueous Interface: A Rapid and Point-of-Care approach.

Detection of bacteremia requires recognizing bloodstream bacteria. Early identification of bacteremia is imperative for treatment and prevents the escalation to systemic infections like septicaemia. This paper introduces a novel, label-free biosensor based on liquid crystals (LCs), designed to offer rapid and reliable optical detection of blood pathogens without using traditional PCR methods.

Magneto-strain effects in 2D ferromagnetic van der Waal material CrGeTe[Formula: see text].

The idea of strain based manipulation of spins in magnetic two-dimensional (2D) van der Waal (vdW) materials leads to the development of new generation spintronic devices. Magneto-strain arises in these materials due to the thermal fluctuations and magnetic interactions which influences both the lattice dynamics and the electronic bands. Here, we report the mechanism of magneto-strain effects in a vdW material CrGeTe[Formula: see text] across the ferromagnetic (FM) transition.

An additional simultaneous magnetic ordering and magneto-capacitive behavior with dielectric relaxation besides multiferroicity in Fe1-xTeVO.

Here we report the evidence of an additional magnetic ordering and frequency dispersive magneto-dielectric (MD) permittivity besides multiferroic behavior in Te(= 0) doped FeVO. Two antiferromagnetic transitions similar to FeVOat ∼21.86 K (TN1) and 16.

Lattice assisted dielectric relaxation in four-layer Aurivillius BiFeTiOceramic at low temperatures.

We have investigated magnetic, structural and dielectric properties of BiFeTiO(BFTO) in the temperature range 5K-300 K. Using diffraction, Raman spectroscopy and x-ray absorption fine structure measurements, iso-structural modifications are observed at low temperatures (≈100 K). The analysis of dielectric constant data revealed signatures of dielectric relaxation, concomitant with these structural modifications in BFTO at the same temperatures.

Origin of ferroelectricity in cubic phase of Hf substituted BaTiO.

The origin of ferroelectricity in the cubic phase of BaTiHfOhas been investigated. The presence of well-defined ferroelectric polarization versus electric field (PE) hysteresis loop in the samples with global cubic symmetry suggests the presence of 'local polar regions', induced possibly due to the huge difference in the electronegativity and also difference in the ionic radii of Hfand Tiions, which may lead to local structural disorder. The presence of polar regions is also supported through the appearance of A(TO) polar mode in Raman spectra which in principle should be absent in the samples with cubic symmetry.

Possibility of using ultraviolet radiation for disinfecting the novel COVID-19.

The world health organization (WHO) declared novel COVID-19 as a pandemic in March 2020 and as of now has infected hundreds of millions of people across the globe. Here in this report, we propose the importance of light-based technologies in disinfecting the novel COVID-19, present on the surface of phone, plastic surfaces, wallets, watches, cloths. This article identifies the benefits of repurposing ultraviolet light-based strategies to combat the emergence of COVID-19 pandemic.

High Performance Lithium-Ion Batteries Using Layered 2H-MoTe as Anode.

The major challenges faced by candidate electrode materials in lithium-ion batteries (LIBs) include their low electronic and ionic conductivities. 2D van der Waals materials with good electronic conductivity and weak interlayer interaction have been intensively studied in the electrochemical processes involving ion migrations. In particular, molybdenum ditelluride (MoTe ) has emerged as a new material for energy storage applications.

Spin reorientation transition and coupled spin-lattice dynamics of SmDyFeO.

In this work, we have presented a solid-solution of SmDyFeOin the form of nano-particles having spin reorientation transition (SRT) at a temperature interval of 220-260 K. The lattice dynamics of SmDyFeOhave investigated by temperature-dependent x-ray diffraction and Raman spectroscopy. A negative thermal expansion at low temperatures has observed, which might be due to the interaction between Smand Fesublattice.

Strain induced disordered phonon modes in Cr doped PrFeO.

Room temperature optical absorption spectroscopy (OAS) and Raman spectroscopy measurements have been carried out in order to understand the effect of structural disorder on the electronic and phononic states. For this purpose, polycrystalline samples of Cr doped PrFeO have been prepared via wet chemical route. OAS analysis suggests the systematic scaling of electronic disorder with Cr doping; whereas, shifting in Raman line shapes and an increase in Raman line width has been observed with Cr doping.

Room-Temperature Magneto-dielectric Effect in LaGaFeO; Origin and Impact of Excess Oxygen.

We report an observation of room-temperature magneto-dielectric (RTMD) effect in LaGaFeO compound. The contribution of intrinsic/resistive sources in the presently observed RTMD effect was analyzed by measuring direct-current (dc) magnetoresistance (MR) in four-probe geometry and frequency-dependent MR via impedance spectroscopy (MRIS). Present MRIS analysis reveals that at frequencies corresponding to grain contribution (≥1 × 10 Hz for present sample), the observed MD phenomenon is MR-free/intrinsic, whereas at lower probing frequencies (<1 × 10 Hz), the observed MD coupling appears to be MR-dominated possibly due to oxygen excess, that is, due to coexistence of Fe and Fe.

Origin of step-like behavior in the Co/Si system.

A systematic investigation of the structure, nature of the interface and their possible connections with magnetic properties for the as-deposited Co/Si/Co trilayer system has been carried out. X-ray reflectivity, cross-sectional transmission electron microscopy and x-ray emission measurements performed on the Co/Si/Co trilayer system show that when the Si layer thickness is less than ∼ 20 Å, the full Si layer is converted into a cobalt silicide layer whereas when the Si layer thickness > 20 Å along with the silicide layer. the pure Si layer also remains.