Universal skyrmion logic gates and circuits based on antiferromagnetically coupled skyrmions without a topological Hall effect.

Nanoscale skyrmions are spin-based quasiparticles that are promising for nonvolatile logic applications. However, the presence of the skyrmion Hall effect (SkHE) in ferromagnetic skyrmions limits their performance in logic devices. Here, we present a detailed micromagnetic modeling study on low-energy skyrmion logic gate circuits based on skyrmions in synthetic antiferromagnetically coupled (SAF) metallic ferromagnetic layers to eliminate the SkHE while reducing current requirements.

Stabilization and adiabatic control of antiferromagnetically coupled skyrmions without the topological Hall effect.

Synthetic antiferromagnetically coupled (SAF) multilayers provide different physics of stabilizing skyrmions while eliminating the topological Hall effect (THE), enabling efficient and stable control. The effects of material parameters, external current drive, and a magnetic field on the skyrmion equilibrium and propagation characteristics are largely unresolved. Here, we present a computational and theoretical demonstration of the large window of material parameters that stabilize SAF skyrmions determined by saturation magnetization, uniaxial anisotropy, and Dzyaloshinskii-Moriya interaction.

Direct current-tunable MHz to multi-GHz skyrmion generation and control.

Skyrmions offer high density, low power, and nonvolatile memory functionalities due to their nanoscale and topologically-protected chiral spin structures. For integrated high-bandwidth devices, one needs to control skyrmion generation and propagation rates using current. Here, we introduce a skyrmion initialization and control method to generate periodic skyrmions from 114 MHz to 21 GHz using spin-polarized direct current.