Sn/InAs Josephson Junctions on Selective Area Grown Nanowires with in Situ Shadowed Superconductor Evaporation.

Superconductor-semiconductor nanowire hybrid structures are useful in fabricating devices for quantum information processing. While selective area growth (SAG) offers the flexibility to grow semiconductor nanowires in arbitrary geometries, in situ evaporation of superconductors ensures pristine superconductor-semiconductor interfaces, resulting in strong induced superconductivity in the semiconducting nanowire. In this work, we used high-aspect-ratio SiO dielectric walls to in situ evaporate islands of superconductor tin on in-plane InAs SAG nanowires.

Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy.

Controlling electronic properties via band structure engineering is at the heart of modern semiconductor devices. Here, we extend this concept to semimetals where, using LuSb as a model system, we show that quantum confinement lifts carrier compensation and differentially affects the mobility of the electron and hole-like carriers resulting in a strong modification in its large, nonsaturating magnetoresistance behavior. Bonding mismatch at the heteroepitaxial interface of a semimetal (LuSb) and a semiconductor (GaSb) leads to the emergence of a two-dimensional, interfacial hole gas.

Quantum yield in polymer wrapped single walled carbon nanotubes: a computational model.

Quantum yield in polymer wrapped single walled carbon nanotubes (SWCNTs) has been computationally investigated using a 2D model of exciton decay with non-radiative channels due to the diffusive motion across the nanotube surface. Beside the role of SWCNT's ends as the exciton quenchers, we have considered the influence of the wrapping polymer through its chemistry and wrapping angle. The model has been solved exactly for zero-angle wrapping, a particular case when the polymer interfaces the nanotube along its axis.