Wide Bandgap Tellurium Oxide Semiconductor as A Back Contact Modifier for Efficient n-i-p SbSe Solar Cells.

The wide-bandgap and p-type semiconductor layer plays a crucial role in the antimony selenide (SbSe) solar cells, as it can provide carrier confinement and inhibit interface recombination. In this work, the tellurium (Te) thin layer is innovatively applied in superstrate SbSe solar cells, which is further in situ oxidized to wide-bandgap (3.67 eV) tellurium oxide (TeO).