Role of growth temperature on microstructural and electronic properties of rapid thermally grown MoTethin film for infrared detection.

In the field of electronic and optoelectronic applications, two-dimensional materials are found to be promising candidates for futuristic devices. For the detection of infrared (IR) light, MoTepossesses an appropriate bandgap for which p-MoTe/n-Si heterojunctions are well suited for photodetectors. In this study, a rapid thermal technique is used to grow MoTethin films on silicon (Si) substrates.