Design and Optimization of SHF Composite FBAR Resonators.

We propose an apodization technique-based composite thin-film bulk acoustic wave resonator (c-FBAR) design to enable the displacement and strain energy confinement at the central section of the resonator while in operation at the resonance mode. Sinc-shaped AlN on Silicon on Insulator apodized c-FBARs is designed to attain close to 90% energy localization. In this paper, a single crystal silicon as the mechanical layer and an AlN piezoelectric material as the transducer layer of the resonator implemented by InvenSense Inc.