Publications by authors named "Anup Shrivastava"

Article Synopsis
  • The manuscript investigates monolayer GeSe, a group IV-VI dichalcogenide, for its potential use as a high-performance hole transport layer in photovoltaic cells, demonstrating its impressive optoelectronic properties.
  • Using advanced modeling techniques, the study reveals that monolayer GeSe has a direct bandgap of 1.12 eV, significant absorption properties, and leads to a solar cell design with an open circuit voltage of 1.11 V and over 28% efficiency.
  • The research highlights the promise of monolayer GeSe in optoelectronic devices and proposes a computational methodology that can be applied to other two-dimensional and three-dimensional materials for future photovoltaic development.
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