Interfacial Polarization of Thin Alq, Gaq, and Erq Films on GaN(0001).

This report presents results of research on electronic structure of three interfaces composed of organic layers of Alq, Gaq, or Erq deposited on GaN semiconductor. The formation of the interfaces and their characterization have been performed in situ under ultrahigh vacuum conditions. Thin layers have been vapor-deposited onto p-type GaN(0001) surfaces.