Physical Properties of an Efficient MAPbBr/GaAs Hybrid Heterostructure for Visible/Near-Infrared Detectors.

Semiconductor photodetectors can work only in specific material-dependent light wavelength ranges, connected with the bandgaps and absorption capabilities of the utilized semiconductors. This limitation has driven the development of hybrid devices that exceed the capabilities of individual materials. In this study, for the first time, a hybrid heterojunction photodetector based on methylammonium lead bromide (MAPbBr) polycrystalline film deposited on gallium arsenide (GaAs) was presented, along with comprehensive morphological, structural, optical, and photoelectrical investigations.

Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (GaO) Thin Films.

Raman spectroscopy, a versatile and nondestructive technique, was employed to develop a methodology for gallium oxide (GaO) phase detection and identification. This methodology combines experimental results with a comprehensive literature survey. The established Raman approach offers a powerful tool for nondestructively assessing phase purity and detecting secondary phases in GaO thin films.

Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-GaO(001).

We investigated atomic site occupancy for the Si dopant in Si-doped κ-GaO(001) using photoelectron spectroscopy (PES) and photoelectron holography (PEH). From PES and PEH, we found that the Si dopant had one chemical state, and three types of inequivalent Si substitutional sites (Si) were formed. The ratios for the inequivalent tetrahedral, pentahedral, and octahedral Si sites were estimated to be 55.

Interfacial Properties of the SnO/κ-GaO p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-GaO.

The interfacial properties of a planar SnO/κ-GaO p-n heterojunction have been investigated by capacitance-voltage (-) measurements following a methodological approach that allows consideration of significant combined series resistance and parallel leakage effects. Single-frequency measurements were carried out in both series- and parallel-model measurement configurations and then compared to the dual-frequency approach, which permits us to evaluate the depletion capacitance of diode independently of leakage conductance and series resistance. It was found that in the bias region, where the dissipation factor was low enough, they give the same results and provide reliable experimental - data.

Size effect on high temperature variable range hopping in Al implanted 4H-SiC.

The hole transport properties of heavily doped 4H-SiC (Al) layers with Al implanted concentrations of 3  ×  10 and 5  ×  10 cm and annealed in the temperature range 1950-2100 °C, have been analyzed to determine the main transport mechanisms. This study shows that the temperature dependence of the resistivity (conductivity) may be accounted for by a variable range hopping (VRH) transport into an impurity band. Depending on the concentration of the implanted impurities and the post-implantation annealing treatment, this VRH mechanism persists over different temperature ranges that may extend up to room temperature.