Reductive Thermal Atomic Layer Deposition Process for Gold.

In this work, we developed an atomic layer deposition (ALD) process for gold metal thin films from chloro(triethylphosphine)gold(I) [AuCl(PEt)] and 1,4-bis(trimethylgermyl)-1,4-dihydropyrazine [(MeGe)DHP]. High purity gold films were deposited on different substrate materials at 180 °C for the first time with thermal reductive ALD. The growth rate is 1.

Atomic layer deposition of PbCl, PbBr and mixed lead halide (Cl, Br, I) PbXY thin films.

Atomic layer deposition offers outstanding film uniformity and conformality on substrates with high aspect ratio features. These qualities are essential for mixed-halide perovskite films applied in tandem solar cells, transistors and light-emitting diodes. The optical and electronic properties of mixed-halide perovskites can be adjusted by adjusting the ratios of different halides.

A low-temperature thermal ALD process for nickel utilizing dichlorobis(triethylphosphine)nickel(II) and 1,4-bis(trimethylgermyl)-1,4-dihydropyrazine.

In this work, we developed a new ALD process for nickel metal from dichlorobis(triethylphosphine)nickel(II) (NiCl(PEt)) and 1,4-bis(trimethylgermyl)-1,4-dihydropyrazine ((MeGe)DHP). A series of phosphine adducts of nickel and cobalt halides were synthesized and characterized for their volatility and thermal stability. Also (MeGe)DHP is a novel reducing agent in ALD.