Sublayer-Enhanced Growth of Highly Ordered MnGe Thin Film on Si(111).

MnGe epitaxial thin films previously grown mainly on Ge substrate have been synthesized on Si(111) using the co-deposition of Mn and Ge at a temperature of 390 °C. RMS roughness decreases by almost a factor of two in the transition from a completely polycrystalline to a highly ordered growth mode. This mode has been stabilized by changing the ratio of the Mn and Ge evaporation rate from the stoichiometric in the buffer layer.

Asymmetric Interfaces in Epitaxial Off-Stoichiometric FeSi/Ge/FeSi Hybrid Structures: Effect on Magnetic and Electric Transport Properties.

Three-layer iron-rich FeSi/Ge/FeSi (0.2 < < 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy.

Protein biosensor based on Schottky barrier nanowire field effect transistor.

A top-down nanofabrication approach involving molecular beam epitaxy and electron beam lithography was used to obtain silicon nanowire-based back gate field-effect transistors with Schottky contacts on silicon-on-insulator (SOI) wafers. The resulting device is applied in biomolecular detection based on the changes in the drain-source current (I). In this context, we have explained the physical mechanisms of charge carrier transport in the nanowire using energy band diagrams and numerical 2D simulations in TCAD.

Structural, Optical, and Electronic Properties of Cu-Doped TiNO Grown by Ammonothermal Atomic Layer Deposition.

Copper-doped titanium oxynitride (TiNO) thin films were grown by atomic layer deposition (ALD) using the TiCl precursor, NH, and O at 420 °C. Forming gas was used to reduce the background oxygen concentration and to transfer the copper atoms in an ALD chamber prior to the growth initiation of Cu-doped TiNO. Such forming gas-mediated Cu-doping of TiNO films had a pronounced effect on their resistivity, which dropped from 484 ± 8 to 202 ± 4 μΩ cm, and also on the resistance temperature coefficient (TCR), which decreased from 1000 to 150 ppm °C.