Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor.

Reconfigurable transistors are an emerging device technology adding new functionalities while lowering the circuit architecture complexity. However, most investigations focus on digital applications. Here, we demonstrate a single vertical nanowire ferroelectric tunnel field-effect transistor (ferro-TFET) that can modulate an input signal with diverse modes including signal transmission, phase shift, frequency doubling, and mixing with significant suppression of undesired harmonics for reconfigurable analogue applications.

Sensing single domains and individual defects in scaled ferroelectrics.

Ultra-scaled ferroelectrics are desirable for high-density nonvolatile memories and neuromorphic computing; however, for advanced applications, single domain dynamics and defect behavior need to be understood at scaled geometries. Here, we demonstrate the integration of a ferroelectric gate stack on a heterostructure tunnel field-effect transistor (TFET) with subthermionic operation. On the basis of the ultrashort effective channel created by the band-to-band tunneling process, the localized potential variations induced by single domains and individual defects are sensed without physical gate-length scaling required for conventional transistors.

Ferroelectric-Antiferroelectric Transition of Hf Zr O on Indium Arsenide with Enhanced Ferroelectric Characteristics for HfZrO.

The ferroelectric (FE)-antiferroelectric (AFE) transition in Hf Zr O (HZO) is for the first time shown in a metal-ferroelectric-semiconductor (MFS) stack based on the III-V material InAs. As InAs displays excellent electron mobility and a narrow band gap, the integration of ferroelectric thin films for nonvolatile operations is highly relevant for future electronic devices and motivates further research on ferroelectric integration. When increasing the Zr fraction from 0.

Effects of TiN Top Electrode Texturing on Ferroelectricity in HfZrO.

Ferroelectric memories based on hafnium oxide are an attractive alternative to conventional memory technologies due to their scalability and energy efficiency. However, there are still many open questions regarding the optimal material stack and processing conditions for reliable device performance. Here, we report on the impact of the sputtering process conditions of the commonly used TiN top electrode on the ferroelectric properties of HfZrO.

Multidimensional Hybridization of Dark Surface Plasmons.

Synthetic three-dimensional (3D) nanoarchitectures are providing more control over light-matter interactions and rapidly progressing photonic-based technology. These applications often utilize the strong synergy between electromagnetic fields and surface plasmons (SPs) in metallic nanostructures. However, many of the SP interactions hosted by complex 3D nanostructures are poorly understood because they involve dark hybridized states that are typically undetectable with far-field optical spectroscopy.