Publications by authors named "Anton Bochkarev"

We present an atomic cluster expansion (ACE) for carbon that improves over available classical and machine learning potentials. The ACE is parametrized from an exhaustive set of important carbon structures over extended volume and energy ranges, computed using density functional theory (DFT). Rigorous validation reveals that ACE accurately predicts a broad range of properties of both crystalline and amorphous carbon phases while being several orders of magnitude more computationally efficient than available machine learning models.

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Silica-based resistive random access memory devices have become an active research area due to complementary metal-oxide-semiconductor compatibility and recent dramatic increases in their performance and endurance. In spite of both experimental and theoretical insights gained into the electroforming process, many atomistic aspects of the set and reset operation of these devices are still poorly understood. Recently a mechanism of electroforming process based on the formation of neutral oxygen vacancies (V) and interstitial O ions (O) facilitated by electron injection into the oxide has been proposed.

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We combine state-of-the-art Green's-function methods and nonequilibrium molecular dynamics calculations to study phonon transport across the unconventional interfaces that make up crystal-phase and twinning superlattices in nanowires. We focus on two of their most paradigmatic building blocks: cubic (diamond/zinc blende) and hexagonal (lonsdaleite/wurtzite) polytypes of the same group-IV or III-V material. Specifically, we consider InP, GaP and Si, and both the twin boundaries between rotated cubic segments and the crystal-phase boundaries between different phases.

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