Nanoscale Wet Etching of Molybdenum Interconnects with Organic Solutions.

Molybdenum (Mo) has emerged as a promising material for advanced semiconductor devices, especially in the design and fabrication of interconnects requiring sub-10 nm metal nanostructures. However, current wet etching methods for Mo using aqueous solutions struggle to achieve smooth etching profiles at such scales. To address this problem, we explore wet chemical etching of patterned Mo nanowires (NWs) using an organic solution: ceric ammonium nitrate (CAN) dissolved in acetonitrile (ACN).

Selective Wet Etching of Silicon Germanium in Composite Vertical Nanowires.

Silicon germanium (SiGe or SiGe) is an important semiconductor material for the fabrication of nanowire-based gate-all-around transistors in the next-generation logic and memory devices. During the fabrication process, SiGe can be used either as a sacrificial layer to form suspended horizontal Si nanowires or, because of its higher carrier mobility, as a possible channel material that replaces Si in both horizontal and vertical nanowires. In both cases, there is a pressing need to understand and develop nanoscale etching processes that enable controlled and selective removal of SiGe with respect to Si.

Visualizing anisotropy in the surface oxidation of germanium by wet etching of patterned nanowedges: proof of concept.

We study the anisotropy in surface oxidation for Ge(100) and (110) in HCl/H2O2 solution complemented by synchrotron X-ray photoemission spectroscopy (SXPS) measurements integrated with an in situ etching chamber. Visual anisotropic demonstration is confirmed by lithographic Ge nanowedges.

Scaled-Down c-Si and c-SiGe Wagon-Wheels for the Visualization of the Anisotropy and Selectivity of Wet-Chemical Etchants.

Wet etching offers an advantage as a soft, damage-less method to remove sacrificial material with close to nanometer precision which has become critical for the fabrication of nanoscale structures. In order to develop such wet etching solutions, screening of etchant properties like selectivity and (an)isotropy has become vital. Since these etchants typically have low etch rates, sensitive test structures are required to evaluate their etching behavior.

Non-destructive characterization of extended crystalline defects in confined semiconductor device structures.

Semiconductor heterostructures are at the heart of most nanoelectronic and photonic devices such as advanced transistors, lasers, light emitting diodes, optical modulators and photo-detectors. However, the performance and reliability of the respective devices are often limited by the presence of crystalline defects which arise from plastic relaxation of misfit strain present in these heterogeneous systems. To date, characterizing the nature and distribution of such defects in 3D nanoscale devices precisely and non-destructively remains a critical metrology challenge.

Relaxometric study of copper [15]metallacrown-5 gadolinium complexes derived from alpha-aminohydroxamic acids.

Proton nuclear magnetic relaxation dispersion (NMRD) profiles were recorded between 0.24 mT and 1.4 T for lanthanum(III)- and gadolinium(III)-containing [15]metallacrown-5 complexes derived from alpha-aminohydroxamic acids and with copper(II) as the ring metal.

Pentacopper(II) complexes of alpha-aminohydroxamic acids: uranyl-induced conversion of a 12-metallacrown-4 to a 15-metallacrown-5.

Effects of uranyl on the pentacopper(II) complexes of alpha-leucinehydroxamic acid and alpha-tyrosinehydroxamic acid were studied in water and methanol by means of electrospray ionisation mass spectrometry (ES-MS), absorption spectrophotometry, circular dichroism spectroscopy and proton NMR spectroscopy. All the measurements were consistent with the complete conversion of a 12-metallacrown-4 to a 15-metallacrown-5 upon addition of one equivalent of the uranyl ion. The uranyl ion is accommodated in the cavity formed by five copper(II) ions and five alpha-aminohydroxamate ligands.