Multiplexing in photonics as a resource for optical ternary content-addressable memory functionality.

In this paper, we combine a Content-Addressable Memory (CAM) encoding scheme previously proposed for analog electronic CAMs (E-CAMs) with optical multiplexing techniques to create two new photonic CAM architectures-wavelength-division multiplexing (WDM) optical ternary CAM (O-TCAM) and time-division multiplexing (TDM) O-TCAM. As an example, we show how these two O-TCAM schemes can be implemented by performing minor modifications in microring-based silicon photonic (SiPh) circuits originally optimized for exascale interconnects. Here, our SiPh O-TCAM designs include not only the actual search engine, but also the transmitter circuits.

32 Gbps heterogeneously integrated quantum dot waveguide avalanche photodiodes on silicon.

We report a heterogeneous GaAs-based quantum dot (QD) avalanche photodiode (APD) on silicon with an ultralow dark current of 10 pA at -1, 3 dB bandwidth of 20 GHz and record gain-bandwidth product (GBP) of 585 GHz. Furthermore, open eye diagrams up to 32 Gb/s are demonstrated at 1310 nm. The k-factor has been measured for these devices to be as low as 0.

Crosstalk analysis of ring resonator switches for all-optical routing.

Optical switches based on ring resonator cavities were fabricated by a silicon photonics foundry process and analyzed for optical crosstalk at various data rates and channel spacings. These devices were compared to commercial bandpass filters and at 20Gb/s, 0.5dB power penalty is observed due to spectral filtering for bit error ratio threshold of 1 × 10.

1310 nm hybrid InP/InGaAsP on silicon distributed feedback laser with high side-mode suppression ratio.

We report on the design, fabrication and performance of a hetero-integrated III-V on silicon distributed feedback lasers (DFB) at 1310 nm based on direct bonding and adiabatic coupling. The continuous wave (CW) regime is achieved up to 55 °C as well as mode-hop-free operation with side-mode suppression ratio (SMSR) above 55 dB. At room temperature, the current threshold is 36 mA and the maximum coupled power in the silicon waveguide is 22 mW.