Simulation of Surface Resonant X-ray Diffraction.

We present an ab initio numerical tool to simulate surface resonant X-ray diffraction experiments. The crystal truncation rods and the spectra around a given X-ray absorption edge are calculated at any position of the reciprocal space. Density functional theory is used to determine the resonant scattering factor of an atom within its local environment and to calculate the diffraction peak intensities for surfaces covered with a thin film or with one or several adsorbed layers.

Quantum dot made in metal oxide silicon-nanowire field effect transistor working at room temperature.

We report the observation of an atomic like behavior from T = 4.2 K up to room temperature in n- and p-type Ω-gate silicon nanowire (NW) transistors. For that purpose, we modified the design of a NW transistor and introduced long spacers between the source/drain and the channel in order to separate the channel from the electrodes.