Tin oxide artificial synapses for low power temporal information processing.

Lateral memristors configured with inert Pt contacts and mixed phase tin oxide layers have exhibited immediate, forming-free, low-power bidirectional resistance switching. Activity dependent conductance and relaxation in the low resistance state resembled short term potentiation in biological synapses. After scanning probe microscopy, x-ray photoelectron spectroscopy and electrical measurements, the device characteristics were attributed to Joule heating induced decomposition of the minority SnO phase and formation of a SnO conducting filament with higher effective n-type doping.

In situ investigation of thermally influenced phase transformations in (Pb 0.92 Sr 0.08)(Zr 0.65 Ti 0.35)O3 thin films using micro-Raman spectroscopy and X-ray diffraction.

Thin films of ferroelectric strontium-doped lead zirconate titanate [PSZT, (Pb(0.92)Sr(0.08))(Zr(0.