Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based Devices.

Insulated-gate GaN-based transistors can fulfill the emerging demands for the future generation of highly efficient electronics for high-frequency, high-power and high-temperature applications. However, in contrast to Si-based devices, the introduction of an insulator on (Al)GaN is complicated by the absence of a high-quality native oxide for GaN. Trap states located at the insulator/(Al)GaN interface and within the dielectric can strongly affect the device performance.