Interlayer Exciton-Phonon Coupling in MoSe/WSe Heterostructures.

Transition metal dichalcogenide heterostructures have garnered strong interest for their robust excitonic properties, mixed light-matter states such as exciton-polaritons, and tailored properties, vital for advanced device engineering. Two-dimensional heterostructures inherit their physics from monolayers with the addition of interlayer processes that have been particularly emphasized for their electronic and optical properties. Here, we demonstrate the interlayer coupling of the MoSe phonons to WSe excitons in a WSe/MoSe heterostructure using resonant Raman scattering.