Structure, Optical and Electrical Properties of Nb(Zn) Doped Sol-Gel ITO Films: Effect of Substrates and Dopants.

We present comparative studies of sol-gel ITO multilayered films undoped and doped with Nb or Zn (4 at.%). The films were obtained by successive depositions of five layers using the dip-coating sol-gel method on microscopic glass, SiO/glass, and Si substrates.

Sol-Gel Multilayered Niobium (Vanadium)-Doped TiO for CO Sensing and Photocatalytic Degradation of Methylene Blue.

Multilayered TiO films doped either with Niobium or Vanadium (1.2 at. %) were deposited by the sol-gel dip coating method on c-Si and glass substrates.

Advanced Nanostructured Coatings Based on Doped TiO for Various Applications.

For many years, TiO-based materials and improving their properties in order to expand their application areas have been the focus of numerous research groups. Various innovative approaches have been proposed to improve the photocatalytic and gas-sensing properties of TiO nanostructures. In this review, we aim to synthesize the available information in the literature, paying special attention to the sol-gel technology, which is one of the most frequently used methods for TiO synthesis.

Investigation of the Effects of Rapid Thermal Annealing on the Electron Transport Mechanism in Nitrogen-Doped ZnO Thin Films Grown by RF Magnetron Sputtering.

Nitrogen-doped ZnO (ZnO:N) thin films, deposited on Si(100) substrates by RF magnetron sputtering in a gas mixture of argon, oxygen, and nitrogen at different ratios followed by Rapid Thermal Annealing (RTA) at 400 °C and 550 °C, were studied in the present work. Raman and photoluminescence spectroscopic analyses showed that introduction of N into the ZnO matrix generated defects related to oxygen and zinc vacancies and interstitials. These defects were deep levels which contributed to the electron transport properties of the ZnO:N films, studied by analyzing the current-voltage characteristics of metal-insulator-semiconductor structures with ZnO:N films, measured at 298 and 77 K.