Enhancing GaN Nanowires Performance Through Partial Coverage with Oxide Shells.

Core-shell gallium nitride (GaN)-based nanowires offer noteworthy opportunities for innovation in high-frequency opto- and microelectronics. This work delves deeply into the physical properties of crystalline GaN nanowires with aluminum and hafnium oxide shells. Particular attention is paid to partial coverage of nanowires, resulting with exceptional properties.

Correction to "Synthesis Attempt and Structural Studies of Novel ACeWO Double Perovskites (A = Ba, Ca) in and outside of Ambient Conditions".

[This corrects the article DOI: 10.1021/acsomega.2c00669.

Role of Metallic Adlayer in Limiting Ge Incorporation into GaN.

Atomically thin metal adlayers are used as surfactants in semiconductor crystal growth. The role of the adlayer in the incorporation of dopants in GaN is completely unexplored, probably because n-type doping of GaN with Si is relatively straightforward and can be scaled up with available Si atomic flux in a wide range of dopant concentrations. However, a surprisingly different behavior of the Ge dopant is observed, and the presence of atomically thin gallium or an indium layer dramatically affects Ge incorporation, hindering the fabrication of GaN:Ge structures with abrupt doping profiles.

Synthesis Attempt and Structural Studies of Novel ACeWO Double Perovskites (A = Ba, Ca) in and outside of Ambient Conditions.

This comprehensive work showcases two novel, rock-salt-type minerals in the form of amphoteric cerium-tungstate double perovskite and ilmenite powders created via a high-temperature solid-state reaction in inert gases. The presented studies have fundamental meaning and will mainly focus on a detailed synthesis description of undoped structures, researching their possible polymorphism in various conditions and hinting at some nontrivial physicochemical properties like charge transfer for upcoming optical studies after eventual doping with selectively chosen rare-earth ions. The formerly mentioned, targeted ABB'X group of compounds contains mainly divalent alkali cations in the form of A = Ba, Ca sharing, here, oxygen-arranged clusters (X = O) with purposely selected central ions from f-block B = Ce and d-block B' = W since together they often possess some exotic properties that could be tuned and implemented into futuristic equipment like sensors or energy converters.

Optical and structural properties of europium doped Y-Al-O compounds grown by microwave driven hydrothermal technique.

Perovskites, garnets, monoclinic forms, and lately also oxyhydroxides doped with rare-earth ions have been drawn large attention due to their beneficial optical and photovoltaic properties. In this work, we have shown that several forms of crystals from Y-Al-O family can be synthesized using microwave driven hydrothermal technique using different pH and post-growth annealing at different temperatures. The structural and optical properties of these crystals were investigated as a function of hydrothermal crystallization conditions.

Near-infrared emission from spatially indirect excitons in type II ZnTe/CdSe/(Zn,Mg)Te core/double-shell nanowires.

ZnTe/CdSe/(Zn, Mg)Te core/double-shell nanowires are grown by molecular beam epitaxy by employing the vapor-liquid-solid growth mechanism assisted with gold catalysts. A photoluminescence study of these structures reveals the presence of an optical emission in the near infrared. We assign this emission to the spatially indirect exciton recombination at the ZnTe/CdSe type II interface.

GaN Nanowire Array for Charge Transfer in Hybrid GaN/P3HT:PCBM Photovoltaic Heterostructure Fabricated on Silicon.

We demonstrate that a GaN nanowire array can be used for efficient charge transfer between the organic photovoltaic layer and silicon in a Si/GaN/P3HT:PCBM inverted hybrid heterostructure. The band alignment of such a material combination is favorable to facilitate exciton dissociation, carrier separation and electron transport into Si. The ordered nature of the GaN array helps to mitigate the intrinsic performance limitations of the organic active layer.

Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes.

InGaN quantum wells were grown using metalorganic chemical vapor phase epitaxy (vertical and horizontal types of reactors) on stripes made on GaN substrate. The stripe width was 5, 10, 20, 50, and 100 µm and their height was 4 and 1 µm. InGaN wells grown on stripes made in the direction perpendicular to the off-cut had a rough morphology and, therefore, this azimuth of stripes was not further explored.

Growth and optical properties of ZnO/ZnMgO quantum wells on ZnO microrods.

While synthesis methods for pure ZnO nanostructures are well established, an efficient technique for the growth of ZnO-based nanowires or microrods that incorporate any type of quantum structure is yet to be established. Here, we report on the fabrication and optical properties of axial Zn1-xMgxO/ZnO/Zn1-xMgxO quantum wells that were deposited by molecular beam epitaxy on ZnO microrods obtained using a hydrothermal method. Using the emission energy results found in cathodoluminescence measurements and the results of a numerical modeling process, we found the quantum well width to be 4 nm, as intended, at the growth stage.

Defect-free SnTe topological crystalline insulator nanowires grown by molecular beam epitaxy on graphene.

SnTe topological crystalline insulator nanowires have been grown by molecular beam epitaxy on graphene/SiC substrates. The nanowires have a cubic rock-salt structure, they grow along the [001] crystallographic direction and have four sidewalls consisting of {100} crystal planes known to host metallic surface states with a Dirac dispersion. Thorough high resolution transmission electron microscopy investigations show that the nanowires grow on graphene in the van der Waals epitaxy mode induced when the catalyzing Au nanoparticles mix with Sn delivered from a SnTe flux, providing a liquid Au-Sn alloy.

Facile synthesis of core/shell ZnO/ZnS nanofibers by electrospinning and gas-phase sulfidation for biosensor applications.

This study describes a new method of passivating ZnO nanofiber-based devices with a ZnS layer. This one-step process was carried out in H2S gas at room temperature, and resulted in the formation of core/shell ZnO/ZnS nanofibers. This study presents the structural, optical and electrical properties of ZnO/ZnS nanofibers formed by a 2 nm ZnS sphalerite crystal shell covering a 5 nm ZnO wurtzite crystal core.

Low-Temperature Cathodoluminescence Investigations of High-Quality Zinc Oxide Nanorods.

We present results of cathodoluminescence (CL) investigations of high-quality zinc oxide (ZnO) nanorods obtained by an extremely fast hydrothermal method on a silicon substrate. A scanning electron microscopy (SEM) system equipped with CL allows direct comparison of SEM images and CL maps, taken from exactly the same areas of samples. Investigations are performed at a temperature of 5 K.

Pressure control of magnetic clusters in strongly inhomogeneous ferromagnetic chalcopyrites.

Room-temperature ferromagnetism in Mn-doped chalcopyrites is a desire aspect when applying those materials to spin electronics. However, dominance of high Curie-temperatures due to cluster formation or inhomogeneities limited their consideration. Here we report how an external perturbation such as applied hydrostatic pressure in CdGeP₂:Mn induces a two serial magnetic transitions from ferromagnet to non-magnet state at room temperature.

The mechanism of Bi nanowire growth from Bi/Co immiscible composite thin films.

Single crystalline Bi nanowires were grown by extrusion from Bi/Co thin films. The films were obtained by thermal evaporation in high vacuum. The average diameter, length and density of obtained nanowires were 100 nm, 30 microm and 6.