Publications by authors named "Anna N Morozovska"

Article Synopsis
  • Combinatorial spread libraries enable the study of material properties across various concentrations and conditions, but traditionally require extensive functional property measurements.
  • The authors introduce automated piezoresponse force microscopy (PFM) to efficiently analyze these libraries, specifically in the SmBiFeO system, which features a unique phase boundary between ferroelectric and antiferroelectric states.
  • By utilizing PFM and developing a mathematical framework based on Ginzburg-Landau theory, they aim to streamline materials discovery and make their data accessible for further research in the field.
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  • Ferroelectric materials have the potential to transform information technology due to their low power use, quick speeds, and excellent durability, but there are challenges with integrating them into existing semiconductor technologies.
  • Recent research has shown promising ferroelectric properties in new binary oxides like ZnMgO, which could lead to practical applications.
  • The study identifies two distinct ferroelectric subsystems in ZnMgO and introduces a new mechanism for polarization switching, challenging traditional views on how these materials behave, which could advance both fundamental physics and technological applications.
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Nanoscale ferroelectric 2D materials offer the opportunity to investigate curvature and strain effects on materials functionalities. Among these, CuInPS (CIPS) has attracted tremendous research interest in recent years due to combination of room temperature ferroelectricity, scalability to a few layers thickness, and ferrielectric properties due to coexistence of 2 polar sublattices. Here, we explore the local curvature and strain effect on polarization in CIPS via piezoresponse force microscopy and spectroscopy.

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  • Ferroelectricity in binary oxides like hafnia and zirconia has gained attention for its unique physical mechanisms and potential use in semiconductors.
  • Recent studies indicate that the properties of these materials are influenced by various factors, including electrochemical conditions and strain, leading to unusual behaviors.
  • Research utilizing advanced microscopy reveals that these materials exhibit a range of ferroic behaviors, suggesting an antiferroionic model that could help optimize hafnia-based devices.
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Using hypothesis-learning-driven automated scanning probe microscopy (SPM), we explore the bias-induced transformations that underpin the functionality of broad classes of devices and materials from batteries and memristors to ferroelectrics and antiferroelectrics. Optimization and design of these materials require probing the mechanisms of these transformations on the nanometer scale as a function of a broad range of control parameters, leading to experimentally intractable scenarios. Meanwhile, often these behaviors are understood within potentially competing theoretical hypotheses.

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Ferroelectric domain boundaries are quasi-two-dimensional functional interfaces with high prospects for nanoelectronic applications. Despite their reduced dimensionality, they can exhibit complex non-Ising polarization configurations and unexpected physical properties. Here, the impact of the three-dimensional (3D) curvature on the polarization profile of nominally uncharged 180° domain walls in LiNbO is studied using second-harmonic generation microscopy and 3D polarimetry analysis.

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Article Synopsis
  • Continuous advancements in electronic devices beyond traditional silicon require the integration of ferroelectric and semiconductor materials, particularly hafnium oxide (HfO).
  • Recent research shows that local helium (He) implantation can activate ferroelectric properties in HfO, although the mechanisms behind this process are still not fully understood.
  • The study explores various factors like molar volume changes and vacancy dynamics caused by He ion implantation, which provides insights into the origins of ferroelectricity and potential for developing new nanoengineered materials.
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Machine learning is rapidly becoming an integral part of experimental physical discovery via automated and high-throughput synthesis, and active experiments in scattering and electron/probe microscopy. This, in turn, necessitates the development of active learning methods capable of exploring relevant parameter spaces with the smallest number of steps. Here, an active learning approach based on conavigation of the hypothesis and experimental spaces is introduced.

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Since their discovery in late 1940s, perovskite ferroelectric materials have become one of the central objects of condensed matter physics and materials science due to the broad spectrum of functional behaviors they exhibit, including electro-optical phenomena and strong electromechanical coupling. In such disordered materials, the static properties of defects such as oxygen vacancies are well explored but the dynamic effects are less understood. In this work, the first observation of enhanced electromechanical response in BaTiO thin films is reported driven via dynamic local oxygen vacancy control in piezoresponse force microscopy (PFM).

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Ordering of mobile defects in functional materials can give rise to fundamentally new phases possessing ferroic and multiferroic functionalities. Here we develop the Landau theory for strain induced ordering of defects (e.g.

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The physics of ferroelectric domain walls is explored using the Bayesian inference analysis of atomically resolved STEM data. We demonstrate that domain wall profile shapes are ultimately sensitive to the nature of the order parameter in the material, including the functional form of Ginzburg-Landau-Devonshire expansion, and numerical value of the corresponding parameters. The preexisting materials knowledge naturally folds in the Bayesian framework in the form of prior distributions, with the different order parameters forming competing (or hierarchical) models.

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Domain walls and topological defects in ferroelectric materials have emerged as a powerful tool for functional electronic devices including memory and logic. Similarly, wall interactions and dynamics underpin a broad range of mesoscale phenomena ranging from giant electromechanical responses to memory effects. Exploring the functionalities of individual domain walls, their interactions, and controlled modifications of the domain structures is crucial for applications and fundamental physical studies.

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We consider a model of a nanocomposite based on noninteracting spherical single-domain ferroelectric nanoparticles (NPs) of various sizes embedded in a dielectric matrix. The size distribution function of these NPs is selected as a part of the truncated Gaussian distribution from minimum to maximum radius. For such nanocomposites, we calculate the dependences of the reversible part of the electric polarization, the electrocaloric (EC) temperature change, and the dielectric permittivity on the external electric field, which have the characteristic form of hysteresis loops.

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Article Synopsis
  • Polar van der Waals chalcogenophosphates have unique properties like negative electrostriction and multi-well ferrielectricity, allowing their use in dielectric and 2D electronic applications.
  • Using low-temperature piezoresponse force microscopy, researchers discovered piezoelectric and non-piezoelectric phases coexisting in CuInPSe, which creates unusual domain walls with a heightened piezoelectric response.
  • The findings indicate a partially polarized antiferroelectric state with distinct ferrielectric domains, supported by optical spectroscopies and calculations, paving the way for innovative use of functional domain walls in van der Waals heterostructures.
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The observation of ferroelectric, ferromagnetic, and ferroelastic phases in thin films of binary oxides attracts the broad interest of scientists and engineers. However, the theoretical consideration of the physical nature of the observed behavior was performed mainly for HfO thin films from the first principles, and in the framework of Landau-Ginzburg-Devonshire (LGD) phenomenological approach with special attention to the role of oxygen vacancies in both cases. Allowing for the generality of the LGD theory, we applied it to the group of binary oxides in this work.

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We studied magnetostatic response of the BiLaFeO- KBr composites (BLFO-KBr) consisting of nanosized (≈100 nm) ferrite BiLaFeO (BLFO) conjugated with fine grinded ionic conducting KBr. When the fraction of KBr is rather small (less than 15 wt%) the magnetic response of the composite is very weak and similar to that observed for the BLFO (pure KBr matrix without BiLaFeO has no magnetic response as anticipated). However, when the fraction of KBr increases above 15%, the magnetic response of the composite changes substantially and the field dependence of magnetization reveals ferromagnetic-like hysteresis loop with a remanent magnetization about 0.

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For over 70 years, ferroelectric materials have been one of the central research topics for condensed matter physics and material science, an interest driven both by fundamental science and applications. However, ferroelectric surfaces, the key component of ferroelectric films and nanostructures, still present a significant theoretical and even conceptual challenge. Indeed, stability of ferroelectric phase per se necessitates screening of polarization charge.

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Nanoparticles of potassium tantalate (KTaO) and potassium niobate (KNbO) were synthesized by oxidation of metallic tantalum in molten potassium nitrate with the addition of potassium hydroxide. Magnetization curves obtained on these ferroelectric nanoparticles exhibit a weak ferromagnetism, while these compounds are nonmagnetic in a bulk. The experimental data are used as a start point for theoretical calculations.

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Self-assembly of ferroelectric materials attracts significant interest because it offers a promising fabrication route to novel structures useful for microelectronic devices such as nonvolatile memories, integrated sensors/actuators, or energy harvesters. In this work, we demonstrate a novel approach for self-assembly of organic ferroelectrics (as exemplified by ferroelectric β-glycine) using evaporative dewetting, which allows forming quasi-regular arrays of nano- and microislands with preferred orientation of polarization axes. Surprisingly, self-assembled islands are crystallographically oriented in a radial direction from the center of organic "grains" formed during dewetting process.

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Hysteresis loop analysis via piezoresponse force microscopy (PFM) is typically performed to probe the existence of ferroelectricity at the nanoscale. However, such an approach is rather complex in accurately determining the pure contribution of ferroelectricity to the PFM. Here, we suggest a facile method to discriminate the ferroelectric effect from the electromechanical (EM) response through the use of frequency dependent ac amplitude sweep with combination of hysteresis loops in PFM.

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Polarization switching in ferroelectric materials is governed by a delicate interplay between bulk polarization dynamics and screening processes at surfaces and domain walls. Here we explore the mechanism of tip-induced polarization switching at nonpolar cuts of uniaxial ferroelectrics. In this case, the in-plane component of the polarization vector switches, allowing for detailed observations of the resultant domain morphologies.

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Electrochemical strain microscopy (ESM) employs a strong electromechanical coupling in solid ionic conductors to map ionic transport and electrochemical processes with nanometer-scale spatial resolution. To elucidate the mechanisms of the ESM image formation, we performed self-consistent numerical modeling of the electromechanical response in solid electrolytes under the probe tip in a linear, small-signal regime using the Boltzmann-Planck-Nernst-Einstein theory and Vegard's law while taking account of the electromigration and diffusion. The characteristic time scales involved in the formation of the ESM response were identified.

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Electric field-induced polarization switching underpins most functional applications of ferroelectric materials in information technology, materials science and optoelectronics. Recently, much attention has been focused on the switching of individual domains using scanning probe microscopy. The classical picture of tip-induced switching, including formation of cylindrical domains with size, is largely determined by the field distribution and domain wall motion kinetics.

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