An approach has been developed to produce silver nanoparticles (AgNPs) rapidly on semiconductor wafers using electrochemical deposition. The closely packed AgNPs have a density of up to 1.4 × 1011 cm-2 with good size uniformity.
View Article and Find Full Text PDFWe demonstrate the feasibility of fabricating heterojunctions of semiconductors with high mismatches in lattice constant and coefficient of thermal expansion by employing nanomembrane bonding. We investigate the structure of and electrical transport across the interface of a Si/Ge bilayer formed by direct, low-temperature hydrophobic bonding of a 200 nm thick monocrystalline Si(001) membrane to a bulk Ge(001) wafer. The membrane bond has an extremely high quality, with an interfacial region of ∼1 nm.
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