Noncontact Perception of Thin-Film Transistors by the Synergy of Both Capacitive and Electrostatic Induction Mechanisms.

In recent years, the rapid expansion of research and application of the Internet of Things and wearable electronics has prompted the development of a variety of sensors to perceive physical or chemical information from both the human body and the environment, among which the proximity sensor is a kind of noncontact sensor used to detect the approach of a target and thus exhibits promising applications in human-machine interactions. Thin-film transistors are one type of key components in modern electronics and have been further developed as electrostatic-induction-type proximity sensors to perceive the approach of electrically charged objects. However, they are immune to the approach of a zero-potential object.

Tungsten-Doped Indium Tin Oxide Thin-Film Transistors for Dual-mode Proximity Sensing Application.

Technologies for human-machine interactions are booming now. In order to achieve multifunctional sensing abilities of electronic skins, further developments of various sensors are in urgent demand. Herein, a dual-mode proximity sensor based on an oxide thin-film transistor (TFT) is reported.