Acyclovir Dosing Practices Across a Multicenter Cohort of Neonatal Intensive Care Units.

Background: Acyclovir is the first-line therapy for neonatal herpes simplex virus infections. Therapy can mitigate morbidity and mortality but carries a risk for toxicity. We aimed to compare acyclovir dosing in neonatal intensive care units to published recommendations based on population pharmacokinetic (PopPK) analysis.

Insight into the biochemical and cell biological function of an intrinsically unstructured heat shock protein, Hsp12 of Ustilago maydis.

Small heat shock proteins (sHsps) play diverse roles in the stress response and maintenance of cellular functions. The Ustilago maydis genome codes for few sHsps. Among these, Hsp12 has previously been demonstrated to be involved in the pathogenesis of the fungus by our group.

Sarcosine Prostate Cancer Biomarker Detection by Controlling Oxygen in NiO Membrane on Vertical Silicon Nanowires in Electrolyte-Insulator-Nanowire Structure.

Sarcosine prostate cancer biomarker with the low concentration of 1 pM has been detected by controlling oxygen from 1 to 15 sccm in a NiO membrane on chemically etched vertical Si nanowires (SiNWs) in an electrolyte-insulator-nanowire (EIN) structure. The vertical Si nanowires with approximately 17 μm length and polycrystalline NiO membrane are observed by both field-emission scanning electron microscope (FE-SEM) and high-resolution transmission electron microscope (HRTEM) images, respectively. The optimized NiO membrane with oxygen content of 4 sccm on planar SiO/Si substrate shows good pH sensitivity of approximately 50 mV/pH, low hysteresis of 3.

Scalable cross-point resistive switching memory and mechanism through an understanding of HO/glucose sensing using an IrO/AlO/W structure.

The resistive switching characteristics of a scalable IrO/AlO/W cross-point structure and its mechanism for pH/HO sensing along with glucose detection have been investigated for the first time. Porous IrO and Ir/Ir oxidation states are observed via high-resolution transmission electron microscope, field-emission scanning electron spectroscopy, and X-ray photo-electron spectroscopy. The 20 nm-thick IrO devices in sidewall contact show consecutive long dc cycles at a low current compliance (CC) of 10 μA, multi-level operation with CC varying from 10 μA to 100 μA, and long program/erase endurance of >10 cycles with 100 ns pulse width.

Understanding of multi-level resistive switching mechanism in GeO through redox reaction in HO/sarcosine prostate cancer biomarker detection.

Formation-free multi-level resistive switching characteristics by using 10 nm-thick polycrystalline GeO film in a simple W/GeO/W structure and understanding of switching mechanism through redox reaction in HO/sarcosine sensing (or changing Ge°/Ge oxidation states under external bias) have been reported for the first time. Oxidation states of Ge/Ge are confirmed by both XPS and HO sensing of GeO membrane in electrolyte-insulator-semiconductor structure. Highly repeatable 1000 dc cycles and stable program/erase (P/E) endurance of >10 cycles at a small pulse width of 100 ns are achieved at a low operation current of 0.

Negative voltage modulated multi-level resistive switching by using a Cr/BaTiO/TiN structure and quantum conductance through evidence of HO sensing mechanism.

Negative voltage modulated multi-level resistive switching with quantum conductance during staircase-type RESET and its transport characteristics in Cr/BaTiO/TiN structure have been investigated for the first time. The as-deposited amorphous BaTiO film has been confirmed by high-resolution transmission electron microscopy. X-ray photo-electron spectroscopy shows different oxidation states of Ba in the switching material, which is responsible for tunable more than 10 resistance states by varying negative stop voltage owing to slow decay value of RESET slope (217.

Detection of pH and Enzyme-Free H2O2 Sensing Mechanism by Using GdO x Membrane in Electrolyte-Insulator-Semiconductor Structure.

A 15-nm-thick GdO x membrane in an electrolyte-insulator-semiconductor (EIS) structure shows a higher pH sensitivity of 54.2 mV/pH and enzyme-free hydrogen peroxide (H2O2) detection than those of the bare SiO2 and 3-nm-thick GdO x membranes for the first time. Polycrystalline grain and higher Gd content of the thicker GdO x films are confirmed by transmission electron microscopy (TEM) and X-ray photo-electron spectroscopy (XPS), respectively.