Magnetic Domain Characterization and Physical Properties of Gd-Doped and (Gd, Al) Co-Doped ZnO Thin Films.

Undoped ZnO, Gd-doped ZnO with various doping concentration (1, 3, 5, and 7 at%), and 3 at% (Gd, Al) co-doped ZnO films were prepared on a glass substrate using the co-reactive sputtering method. The influence of the doping and co-doping process on the films was characterized using X-ray diffraction, FESEM, EDX, MFM, VSM, UV-VIS spectroscopy, and the Hall Effect measurement at room temperature. XRD study confirmed that the Gd and Al ions are incorporated into a ZnO lattice.

Difference in structural and chemical properties of sol-gel spin coated Al doped TiO, Y doped TiO and Gd doped TiO based on trivalent dopants.

In this research, pure titanium dioxide (TiO) and doped TiO thin film layers were prepared using the spin coating method of titanium(iv) butoxide on a glass substrate from the sol-gel method and annealed at 500 °C. The effects on the structural and chemical properties of these thin films were then investigated. The metal doped TiO thin film which exists as trivalent electrons consists of aluminium (Al), yttrium (Y) and gadolinium (Gd).