Publications by authors named "Anica N Neumann"
The direct epitaxial growth of high-quality III-V semiconductors on Si is a challenging materials science problem with a number of applications in optoelectronic devices, such as solar cells and on-chip lasers. We report the reduction of dislocation density in GaAs solar cells grown directly on nanopatterned V-groove Si substrates by metal-organic vapor-phase epitaxy. Starting from a template of GaP on V-groove Si, we achieved a low threading dislocation density (TDD) of 3 × 10 cm in the GaAs by performing thermal cycle annealing of the GaAs followed by growth of InGaAs dislocation filter layers.
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- Researchers are exploring a method to lower the cost of III-V solar cells by detaching them from their growth substrate, allowing for the reuse of the substrate to produce multiple cells.
- The study focuses on smoothing the faceted surfaces left on GaAs(100) substrates after spalling to enable the growth of high-quality solar cells.
- The smoothing process can be influenced by the choice of epilayer material and the introduction of impurities or dopants, which significantly affect the smoothness and rate of surface improvement.