Influence of Doping on the Topological Surface States of Crystalline BiSe Topological Insulators.

We present STM/STS, ARPES and magnetotransport studies of the surface topography and electronic structure of pristine BiSe in comparison to BiMgSe and BiFeSe. The topography images reveal a large number of complex, triangle-shaped defects at the surface. The local electronic structure of both the defected and non-defected regions is examined by STS.