Growth Mechanism of Semipolar AlN Layers by HVPE on Hybrid SiC/Si(110) Substrates.

In this work, the growth mechanism of aluminum nitride (AlN) epitaxial films by hydride vapor phase epitaxy (HVPE) on silicon carbide (SiC) epitaxial layers grown on silicon (110) substrates is investigated. The peculiarity of this study is that the SiC layers used for the growth of AlN films are synthesized by the method of coordinated substitution of atoms. In this growth method, a part of the silicon atoms in the silicon substrate is replaced with carbon atoms.

Dielectric Function and Magnetic Moment of Silicon Carbide Containing Silicon Vacancies.

In this work, silicon carbide layers containing silicon vacancies are grown by the Method of Coordinated Substitution of Atoms (MCSA). The main idea of this fundamentally new method is that silicon vacancies are first created in silicon, which is much simpler, and only then is silicon converted into silicon carbide by chemical reaction with carbon monoxide. The dielectric function of silicon carbide containing silicon vacancies, grown on both n- and p-type silicon substrates, is measured for the first time.

Spin Polarization and Magnetic Moment in Silicon Carbide Grown by the Method of Coordinated Substitution of Atoms.

In the present work, a new method for obtaining silicon carbide of the cubic polytype 3C-SiC with silicon vacancies in a stable state is proposed theoretically and implemented experimentally. The idea of the method is that the silicon vacancies are first created by high-temperature annealing in a silicon substrate Si(111) doped with boron B, and only then is this silicon converted into 3C-SiC(111), due to a chemical reaction with carbon monoxide CO. A part of the silicon vacancies that have bypassed "chemical selection" during this transformation get into the SiC.

Anomalous Properties of the Dislocation-Free Interface between Si(111) Substrate and 3C-SiC(111) Epitaxial Layer.

Thin films of single-crystal silicon carbide of cubic polytype with a thickness of 40-100 nm, which were grown from the silicon substrate material by the method of coordinated substitution of atoms by a chemical reaction of silicon with carbon monoxide CO gas, have been studied by spectral ellipsometry in the photon energy range of 0.5-9.3 eV.

Implementation of transformed lenses in bed of nails reducing refractive index maximum value and sub-unity regions.

Transformation optics with quasi-conformal mapping is applied to design a Generalized Maxwell Fish-eye Lens (GMFEL) which can be used as a power splitter. The flattened focal line obtained as a result of the transformation allows the lens to adapt to planar antenna feeding systems. Moreover, sub-unity refraction index regions are reduced because of the space compression effect of the transformation, reducing the negative impact of removing those regions when implementing the lens.