Publications by authors named "Andrey V Babichev"

A tridimensional mathematical model to calculate the electron beam induced current (EBIC) of an axial p-n nanowire junction is proposed. The effect of the electron beam and junction parameters on the distribution of charge carriers and on the collected EBIC current is reported. We demonstrate that the diffusion of charge carriers within the wire is strongly influenced by the electrical state of its lateral surface which is characterized by a parameter called surface recombination velocity ().

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Article Synopsis
  • - The study explores the electrical and optical properties of n-GaN nanowires that contain GaN/AlN quantum discs, utilizing techniques like single wire I(V) measurements, electron beam induced current microscopy (EBIC), and cathodoluminescence (CL) analysis to understand their performance at a nanoscale level.
  • - Findings indicate that unintentional AlN and GaN shells significantly affect the electrical resistance of the nanowires, revealing two regions with electric fields oriented oppositely, which can change under external bias conditions.
  • - Photoluminescence and CL measurements show that the presence of the radial shell leads to a blue shift in the emission from the bottom of the nanowire, while the intensity
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The fabrication technologies and the performance of flexible nanowire light emitting diodes (LEDs) are reviewed. We first introduce the existing approaches for flexible LED fabrication, which are dominated by organic technologies, and we briefly discuss the increasing research effort on flexible inorganic LEDs achieved by micro-structuring and transfer of conventional thin films. Then, flexible nanowire-based LEDs are presented and two main fabrication technologies are discussed: direct growth on a flexible substrate and nanowire membrane formation and transfer.

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We report the study of electrical transport in few-layered CVD-graphene located on nanostructured surfaces in view of its potential application as a transparent contact to optoelectronic devices. Two specific surfaces with a different characteristic feature scale are analyzed: semiconductor micropyramids covered with SiO2 layer and opal structures composed of SiO2 nanospheres. Scanning tunneling microscopy (STM) and scanning electron microscopy (SEM), as well as Raman spectroscopy, have been used to determine graphene/substrate surface profile.

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