Publications by authors named "Andrey P Bolshakov"

The neutrally charged silicon-vacancy defect (SiV) is a colour centre in diamond with spin S = 1, a zero-phonon line (ZPL) at 946 nm and long spin coherence, which makes it a promising candidate for quantum network applications. For the proper performance of such colour centres, all of them must have identical optical characteristics. However, in practice, there are factors that influence each individual centre.

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The generation of terahertz radiation in a photoconductive emitter based on nitrogen-doped single-crystal diamond was realized for the first time. Under 400 nm femtosecond laser pumping, the performance of diamond antennas with different dopant levels was investigated and compared with a reference ZnSe antenna. Terahertz waveforms and corresponding spectra were measured.

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