Ab Initio Study of the Influence of Spin and Orbital Magnetic Moments on the Stability of Magnetic and Charge Distribution in Co:ZnO Monolayer.

The development of ultrathin magnets with tunable magnetic properties is essential for advancing quantum computing technologies. In this study, density functional theory (DFT) calculations were employed to investigate the atomic and electronic structures of a ZnO monolayer embedded with cobalt atoms. The impact of spin dynamics on charge transfer within the Co:ZnO system was thoroughly examined.

Possibilities of Controlling the Quantum States of Hole Qubits in an Ultrathin Germanium Layer Using a Magnetic Substrate: Results from ab Initio Calculations.

Using density functional theory in the noncollinear approximation, the behavior of quantum states of hole qubits in a Ge/Co:ZnO system was studied in this work. A detailed analysis of the electronic structure and the distribution of total charge density and hole states was carried out. It was shown that in the presence of holes, the energetically more favorable quantum state is the state |0˃, in contrast to the state |1˃ when there is no hole in the system.

Quantum mechanical modelling of phosphorus qubits in silicene under constrained magnetization.

A non-collinear density functional theory calculation of the electronic and magnetic structure of phosphorus-doped silicene was performed using atomic constrained magnetization. The antiferromagnetic state for the local magnetic moments of a pair of phosphorus atoms was found to be preferable both without and with constrained magnetization. A spatial change in the charge densities in the regions of substituting phosphorus atoms was shown.

Ab Initio Prediction of Noncollinear Magnetic States of the Quantum Phosphorus Qubit in a Silicon Lattice.

The problem of the practical implementation of quantum computers is an important scientific and technological task at the present time. In this work, using first-principles calculations, a quantum qubit behavior based on a doped phosphorus atom in a Si lattice was theoretically investigated. The local magnetic field (), the local magnetization (), and the spin current density created by the excess electron from the phosphorus atom were calculated.