Setting Plasma Immersion Ion Implantation of Ar Parameters towards Electroforming-Free and Self-Compliance HfO-Based Memristive Structures.

Memristive structures are among the most promising options to be components of neuromorphic devices. However, the formation of HfO-based devices in crossbar arrays requires considerable time since electroforming is a single stochastic operation. In this study, we investigate how Ar plasma immersion ion implantation (PI) affects the Pt/HfO (4 nm)/HfOXNY (3 nm)/TaN electroforming voltage.

Quasiepitaxial Aluminum Film Nanostructure Optimization for Superconducting Quantum Electronic Devices.

In this paper, we develop fabrication technology and study aluminum films intended for superconducting quantum nanoelectronics using AFM, SEM, XRD, HRXRR. Two-temperature-step quasiepitaxial growth of Al on (111) Si substrate provides a preferentially (111)-oriented Al polycrystalline film and reduces outgrowth bumps, peak-to-peak roughness from 70 to 10 nm, and texture coefficient from 3.5 to 1.

The microstructure of Si surface layers after plasma-immersion He ion implantation and subsequent thermal annealing.

The structural changes in the surface layer of p-type Cz-Si(001) samples after high-dose low-energy (2 keV) He plasma-immersion ion implantation and subsequent thermal annealing were studied using a set of complementary methods: high-resolution X-ray reflectometry, high-resolution X-ray diffraction, transmission electron microscopy and atomic force microscopy. The formation of a three-layer structure was observed (an amorphous a-SiO layer at the surface, an amorphous a-Si layer and a heavily damaged tensile-strained crystalline c-Si layer), which remained after annealing. Helium-filled bubbles were observed in the as-implanted sample.