Active control of mid-wavelength infrared non-linearity in silicon photonic crystal slab.

Natural materials' inherently weak nonlinear response demands the design of artificial substitutes to avoid optically large samples and complex phase-matching techniques. Silicon photonic crystals are promising artificial materials for this quest. Their nonlinear properties can be modulated optically, paving the way for applications ranging from ultrafast information processing to quantum technologies.

Taming non-radiative recombination in Si nanocrystals interlinked in a porous network.

A range of the distinctive physical properties, comprising high surface-to-volume ratio, possibility to achieve mechanical and chemical stability after a tailored treatment, controlled quantum confinement and the room-temperature photoluminescence, combined with mass production capabilities offer porous silicon unmatched capabilities required for the development of electro-optical devices. Yet, the mechanism of the charge carrier dynamics remains poorly controlled and understood. In particular, non-radiative recombination, often the main process of the excited carrier's decay, has not been adequately comprehended to this day.

Gold nanoplasmonic particles in tunable porous silicon 3D scaffolds for ultra-low concentration detection by SERS.

A composite material of plasmonic nanoparticles embedded in a scaffold of nano-porous silicon offers unmatched capabilities for use as a SERS substrate. The marriage of these components presents an exclusive combination of tightly focused amplification of Localised Surface Plasmon (LSP) fields inside the material with an extremely high surface-to-volume ratio. This provides favourable conditions for a single molecule or extremely low concentration detection by SERS.

Reconstructing charge-carrier dynamics in porous silicon membranes from time-resolved interferometric measurements.

We performed interferometric time-resolved simultaneous reflectance and transmittance measurements to investigate the carrier dynamics in pump-probe experiments on thin porous silicon membranes. The experimental data was analysed by using a method built on the Wentzel-Kramers-Brillouin approximation and the Drude model, allowing us to reconstruct the excited carriers' non-uniform distribution in space and its evolution in time. The analysis revealed that the carrier dynamics in porous silicon, with ~50% porosity and native oxide chemistry, is governed by the Shockley-Read-Hall recombination process with a characteristic time constant of 375 picoseconds, whereas diffusion makes an insignificant contribution as it is suppressed by the high rate of scattering.

Determination of excitation profile and dielectric function spatial nonuniformity in porous silicon by using WKB approach.

We develop an analytical model based on the WKB approach to evaluate the experimental results of the femtosecond pump-probe measurements of the transmittance and reflectance obtained on thin membranes of porous silicon. The model allows us to retrieve a pump-induced nonuniform complex dielectric function change along the membrane depth. We show that the model fitting to the experimental data requires a minimal number of fitting parameters while still complying with the restriction imposed by the Kramers-Kronig relation.