Setting Plasma Immersion Ion Implantation of Ar Parameters towards Electroforming-Free and Self-Compliance HfO-Based Memristive Structures.

Memristive structures are among the most promising options to be components of neuromorphic devices. However, the formation of HfO-based devices in crossbar arrays requires considerable time since electroforming is a single stochastic operation. In this study, we investigate how Ar plasma immersion ion implantation (PI) affects the Pt/HfO (4 nm)/HfOXNY (3 nm)/TaN electroforming voltage.

Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection.

Application of micro-Raman spectroscopy for the monitoring of quality of high-k (h-k) dielectric protective layer deposition onto the surface of a nanowire (NW) chip has been demonstrated. A NW chip based on silicon-on-insulator (SOI) structures, protected with a layer of high-k dielectric ((h-k)-SOI-NW chip), has been employed for highly sensitive detection of microRNA (miRNA) associated with oncological diseases. The protective dielectric included a 2-nm-thick Al₂O₃ surface layer and a 8-nm-thick HfO₂ layer, deposited onto a silicon SOI-NW chip.