High-performance racetrack resonator in silicon nitride - thin film lithium niobate hybrid platform.

In this paper, we propose an electro-optic modulator design in a hybrid SiN-X-cut LiNbO. The modulator is based on a modified racetrack resonator and performs at both DC and heightened frequencies. Here the driving electrodes are defined along the straight section of the racetrack.

Thin film lithium niobate electro-optic modulator with terahertz operating bandwidth.

We present a thin film crystal ion sliced (CIS) LiNbO phase modulator that demonstrates an unprecedented measured electro-optic (EO) response up to 500 GHz. Shallow rib waveguides are utilized for guiding a single transverse electric (TE) optical mode, and Au coplanar waveguides (CPWs) support the modulating radio frequency (RF) mode. Precise index matching between the co-propagating RF and optical modes is responsible for the device's broadband response, which is estimated to extend even beyond 500 GHz.

110 GHz CMOS compatible thin film LiNbO3 modulator on silicon.

In this paper we address a significant limitation of silicon as an optical material, namely, the upper bound of its potential modulation frequency. This arises due to finite carrier mobility, which fundamentally limits the frequency response of all-silicon modulators to about 60 GHz. To overcome this limitation, another material must be integrated with silicon to provide increased operational bandwidths.

Thin LiNbO3 on insulator electro-optic modulator.

This Letter presents a method for the fabrication and integration of a thin LiNbO3 substrate with a Si handle wafer. An inverted ridge structure guides a single optical mode in an electro-optic modulator fabricated on a mechanically thinned substrate. To define an optical waveguide, a ridge structure is first patterned on a 500 μm thick X-cut LiNbO3 wafer; then a low dielectric constant adhesive layer is used to bond the etched LiNbO3 to Si.