An Ultrafast Active Quenching Active Reset Circuit with 50% SPAD Afterpulsing Reduction in a 28 nm FD-SOI CMOS Technology Using Body Biasing Technique.

An ultrafast Active Quenching-Active Reset (AQAR) circuit is presented for the afterpulsing reduction in a Single Photon Avalanche Diode (SPAD). The proposed circuit is designed in a 28 nm Fully Depleted Silicon On Insulator (FD-SOI) CMOS technology. By exploiting the body biasing technique, the avalanche is detected very quickly and, consequently, is quenched very fast.

A Comparative Study of On-Body Radio-Frequency Links in the 420 MHz⁻2.4 GHz Range.

While there exists a wide variety of radio frequency (RF) technologies amenable for usage in Wireless Body Area Networks (WBANs), which have been studied separately before, it is currently still unclear how their performance compares in true on-body scenarios. In this paper, a single reference on-body scenario-that is, propagation along the arm-is used to experimentally compare six distinct RF technologies (between 420 MHz and 2.4 GHz) in terms of path loss.

A Pixel Pitch-Matched Ultrasound Receiver for 3-D Photoacoustic Imaging With Integrated Delta-Sigma Beamformer in 28-nm UTBB FD-SOI.

This paper presents a pixel pitch-matched readout chip for 3-D photoacoustic (PA) imaging, featuring a dedicated signal conditioning and delta-sigma modulation integrated within a pixel area of 250 µm by 250 µm. The proof-of-concept receiver was implemented in an STMicroelectronics's 28-nm Fully Depleted Silicon On Insulator technology, and interfaces to a 4 × 4 subarray of capacitive micromachined ultrasound transducers (CMUTs). The front-end signal conditioning in each pixel employs a coarse/fine gain tuning architecture to fulfill the 90-dB dynamic range requirement of the application.