The Effects of Friction and Temperature in the Chemical-Mechanical Planarization Process.

Chemical-mechanical planarization (CMP) represents the preferred technology in which both chemical and mechanical interactions are combined to achieve global planarization/polishing of wafer surfaces (wafer patterns from metal with a selective layer, in this paper). CMP is a complex process of material removal process by friction, which interferes with numerous mechanical and chemical parameters. Compared with chemical parameters, mechanical parameters have a greater influence on the material removal rate ().