Antireflection microstructures on ZnSe for mid- and far-IR fabricated by femtosecond laser ablation assisted with wet chemical etching.

Most infrared materials used in high-power systems, such as optical parametric generators, have high values of refractive indices, which result in high Fresnel losses. The performance of conventional antireflection coatings is limited when used in high-power and ultra-broadband systems. An alternative approach is to fabricate antireflection microstructures (ARMs) that allow for a broadband increase in transmittance without reducing the damage threshold of the material.

Laser induced damage threshold of GaSe with antireflection microstructures at a wavelength of 5 µm.

Large GaSe crystals were grown and various antireflection microstructures (ARMs) were fabricated on their cleaved surfaces using optimized femtosecond laser ablation, which provided the antireflection effect in a wide wavelength range of 4-16 µm. The influence of ARMs created on the GaSe surface on the change of the laser-induced damage threshold (LIDT) of the crystal at a wavelength of 5 μm was evaluated. The 5-µm Fe:ZnMgSe laser with the pulse duration of 135 ns was used for the LIDT test in conditions close to single pulse exposure.

Antireflection microstructures fabricated on the surface of a LiGaSe nonlinear crystal.

LiGaSe is a propitious material for nonlinear parametric conversion in the mid-infrared (mid-IR) range. Its refractive index of n = 2.25 in the 2-12 µm wavelength range results in significant losses due to Fresnel reflection.

Fabrication of antireflection microstructures on the surface of GaSe crystal by single-pulse femtosecond laser ablation.

GaSe crystals are promising as nonlinear optical converters in the mid- and far-IR ranges. However, it is challenging to increase the GaSe surface transmittance of 77% with conventional antireflection coatings because of poor surface quality, leading to coating adhesion problems. Antireflection microstructures (ARMs) offer an alternative way of increasing surface transmittance.