Zinc/Cerium-Substituted Magnetite Nanoparticles for Biomedical Applications.

Numerous studies have reported the possibility of enhancing the properties of materials by incorporating foreign elements within their crystal lattice. In this context, while magnetite has widely known properties that have been used for various biomedical applications, the introduction of other metals within its structure could prospectively enhance its effectiveness. Specifically, zinc and cerium have demonstrated their biomedical potential through significant antioxidant, anticancer, and antimicrobial features.

Studies of Defect Structure in Epitaxial AlN/GaN Films Grown on (111) 3C-SiC.

Several aspects such as the growth relation between the layers of the GaN/AlN/SiC heterostructure, the consistency of the interfaces, and elemental diffusion are achieved by High Resolution Transmission Electron Microscopy (HR-TEM). In addition, the dislocation densities together with the defect correlation lengths are investigated via High-Resolution X-ray Diffraction (HR-XRD) and the characteristic positron diffusion length is achieved by Doppler Broadening Spectroscopy (DBS). Moreover, a comparative analysis with our previous work (i.

A New Hybrid Sensitive PANI/SWCNT/Ferrocene-Based Layer for a Wearable CO Sensor.

Developing a sensing layer with high electroactive properties is an important aspect for proper functionality of a wearable sensor. The polymeric nanocomposite material obtained by a simple electropolymerization on gold interdigitated electrodes (IDEs) can be optimized to have suitable conductive properties to be used with direct current (DC) measurements. A new layer based on polyaniline:poly(4-styrenesulfonate) (PANI:PSS)/single-walled carbon nanotubes (SWCNT)/ferrocene (Fc) was electrosynthesized and deposed on interdigital transducers (IDT) and was characterized in detail using electrochemical impedance spectroscopy (EIS), cyclic voltammetry (CV), scanning electron microscopy (SEM), Raman spectroscopy, X-ray photoemission spectroscopy (XPS), and X-ray diffraction (XRD).

Defect Structure Determination of GaN Films in GaN/AlN/Si Heterostructures by HR-TEM, XRD, and Slow Positrons Experiments.

The present article evaluates, in qualitative and quantitative manners, the characteristics (i.e., thickness of layers, crystal structures, growth orientation, elemental diffusion depths, edge, and screw dislocation densities), within two GaN/AlN/Si heterostructures, that alter their efficiencies as positron moderators.

Study of Edge and Screw Dislocation Density in GaN/AlO Heterostructure.

This study assesses the characteristics (edge and screw dislocation density) of a commercially available GaN/AlN/AlO wafer. The heterostructure was evaluated by means of high-resolution X-ray diffraction (HR-XRD), high-resolution transmission electron microscopy (HR-TEM), and Doppler-Broadening Spectroscopy (DBS). The results were mathematically modeled to extract defect densities and defect correlation lengths in the GaN film.