Formation of self-assembled GdO nanowire-like structures during epitaxial growth on Si(001).

The structural and morphological properties of gadolinium oxide (GdO) grown at high temperatures with molecular beam epitaxy on Si(001) were investigated for different stages of growth. The GdO layers were grown at 850 °C with different oxygen partial pressures and substrate miscuts. RHEED and XRD investigations indicate an initial formation of silicide and a subsequent transformation into cubic GdO with (110) orientation.

Influence of nanostructure formation on the crystal structure and morphology of epitaxially grown GdO on Si(001).

The influence of growth conditions on the layer orientation, domain structure and crystal structure of gadolinium oxide (GdO) on silicon (001) has been investigated. GdO was grown at low (250°C) and high (850°C) temperatures with different oxygen partial pressure as well as a temperature ramp up during growth. At low temperature, the cubic bixbyite type of crystal structure with space group Ia{\bar 3} was grown at low oxygen partial pressure.