Publications by authors named "Andrea Tallarico"
Article Synopsis
- - This paper examines how positive bias temperature instability (PBTI) affects the threshold voltage shift (ΔV) in silicon carbide (SiC) power MOSFETs at high temperatures (150 °C).
- - Two primary mechanisms are identified for ΔV: trapping in existing defects at the interface and the formation of new oxide defects, which occur at a specific energy level (~80 meV).
- - Different methods of analysis show consistent patterns in ΔV degradation across various gate stress voltages, offering valuable insights for improving the reliability of SiC MOSFETs.
The University of Bari (Italy), in cooperation with the National Institute of Geophysics and Volcanology (INGV) (Italy), has installed the OTRIONS micro-earthquake network to better understand the active tectonics of the Gargano promontory (Southern Italy). The OTRIONS network operates since 2013 and consists of 12 short period, 3 components, seismic stations located in the Apulian territory (Southern Italy). This data article releases the waveform database collected from 2013 to 2018 and describes the characteristics of the local network in the current configuration.
View Article and Find Full Text PDF